Title :
Equivalent-circuit consideration of dual-gate MESFETs at high frequency
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
The simplified high-frequency equivalent circuit of a dual-gate FET is described. It is shown that the input impedance is similar to that of a single-gate FET but the output resistance and capacitance (parallel equivalent circuit) are higher. The output resistance and the transconductance decrease as frequency increases. The unilateral gain of a dual-gate FET rolls off 12 dB/octave.
Keywords :
Schottky gate field effect transistors; equivalent circuits; capacitance; dual-gate MESFETs; high-frequency equivalent circuit; input impedance; output resistance; transconductance; unilateral gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830480
