Title :
Determination of wavelength dependence of the reflectivity at AR coated diode facets
Author :
Luo, B. ; Wu, L. ; Chen, J. ; Lu, Y.
Author_Institution :
Dept. of Electr. Eng., Southwest Jiaotong Univ., Sichuan, China
Abstract :
Wavelength dependence of the reflectivity at an antireflection (AR) coated diode facet has been determined by comparing the spontaneous emission spectra obtained under the same bias condition before and after this facet is AR coated. Reliable measurements can be achieved by proper choice of the bias current.<>
Keywords :
antireflection coatings; reflectivity; semiconductor lasers; AR coated diode facets; InGaAsP; InGaAsP laser diodes; antireflection coated diode facet; bias condition; bias current; reflectivity; spontaneous emission spectra; wavelength dependence; Coatings; Current measurement; Modulation; Optical fiber devices; Reflectivity; Semiconductor diodes; Semiconductor lasers; Semiconductor optical amplifiers; Spontaneous emission; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
