20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

Author

Devaux, F. ; Dorgeuille, F. ; Ougazzaden, A. ; Huet, Fabrice ; Carre, M. ; Carenco, A. ; Henry, M. ; Sorel, Y. ; Kerdiles, J.-F. ; Jeanney, E.

Author_Institution

CNET, France Telecom, Bagneux, France

Volume

5

Issue

11

fYear

1993

Firstpage

1288

Lastpage

1290

Abstract

The authors have fabricated a ridge waveguide electroabsorption modulator based on the quantum-confined Stark effect in InGaAsP/InGaAsP multiple quantum wells. The drive voltage for 12-dB extinction ratio is 1.2 V, and the frequency response is flat within 2 dB from DC to 20 GHz. Operation at 20 Gb/s is reported. Extensive data concerning the parasitic phase modulation (chirping) are obtained as a function of applied bias acid operating wavelength.<>

Keywords

III-V semiconductors; Stark effect; electro-optical devices; electroabsorption; frequency response; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor quantum wells; 1.2 V; 1.2-V drive voltage; 20 GHz; 20 Gbit/s; 20 Gbit/s operation; InGaAsP-InGaAsP; InGaAsP/InGaAsP MQW electroabsorption modulator; chirping; drive voltage; extinction ratio; frequency response; high-efficiency; multiple quantum wells; parasitic phase modulation; quantum-confined Stark effect; ridge waveguide electroabsorption modulator; Bandwidth; Chirp modulation; Extinction ratio; Frequency response; Optical fiber polarization; Quantum well devices; Signal analysis; Stark effect; Telecommunications; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.250046

Filename

250046