SiGe BiCMOS technology for RF circuit applications

Author

Racanelli, Marco ; Kempf, Paul

Author_Institution

Jazz Semicond., Newport Beach, CA, USA

Volume

52

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1259

Lastpage

1270

Abstract

SiGe BiCMOS is reviewed with focus on today´s production 0.18-μm technology at f_T/f_MAX of 150/200 GHz and future technology where device scaling is bringing about higher f_T/f_MAX, as well as lower power consumption, noise figure, and improved large-signal performance at higher levels of integration. High levels of radio frequency (RF) integration are enabled by the availability of a number of active and passive modules described in this paper including high voltage and high-power devices, complementary PNPs, high quality MIM capacitors, and inductors. Key RF circuit results highlighting the advantages of SiGe BiCMOS in addressing today´s RF IC market are also discussed both for applications at modest frequencies (1 to 10 GHz) as well as for emerging applications at higher frequencies (20 to >100 GHz).

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIM devices; integrated circuit technology; microwave integrated circuits; millimetre wave integrated circuits; 0.18 micron; 1 to 10 GHz; MIM capacitors; RF IC; RF circuit; SiGe; SiGe BiCMOS technology; active module; complementary PNP; inductors; lower power consumption; noise figure; passive module; process technology; radio frequency integration; Availability; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; MIM capacitors; Noise figure; Production; Radio frequency; Silicon germanium; Voltage; Process technology; RF circuits; SiGe BiCMOS; wireless;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.850696

Filename

1459084