Title :
SiGe BiCMOS technology for RF circuit applications
Author :
Racanelli, Marco ; Kempf, Paul
Author_Institution :
Jazz Semicond., Newport Beach, CA, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
SiGe BiCMOS is reviewed with focus on today´s production 0.18-μm technology at fT/fMAX of 150/200 GHz and future technology where device scaling is bringing about higher fT/fMAX, as well as lower power consumption, noise figure, and improved large-signal performance at higher levels of integration. High levels of radio frequency (RF) integration are enabled by the availability of a number of active and passive modules described in this paper including high voltage and high-power devices, complementary PNPs, high quality MIM capacitors, and inductors. Key RF circuit results highlighting the advantages of SiGe BiCMOS in addressing today´s RF IC market are also discussed both for applications at modest frequencies (1 to 10 GHz) as well as for emerging applications at higher frequencies (20 to >100 GHz).
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIM devices; integrated circuit technology; microwave integrated circuits; millimetre wave integrated circuits; 0.18 micron; 1 to 10 GHz; MIM capacitors; RF IC; RF circuit; SiGe; SiGe BiCMOS technology; active module; complementary PNP; inductors; lower power consumption; noise figure; passive module; process technology; radio frequency integration; Availability; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; MIM capacitors; Noise figure; Production; Radio frequency; Silicon germanium; Voltage; Process technology; RF circuits; SiGe BiCMOS; wireless;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.850696
