DocumentCode
987802
Title
The role of charged walls in contiguous-disk bubble devices--A review
Author
Shir, Ching-Cheng ; Sanders, Ian L. ; Lin, Yeong S.
Author_Institution
IBM Research Laboratory, San Jose, CA
Volume
18
Issue
1
fYear
1982
fDate
1/1/1982 12:00:00 AM
Firstpage
217
Lastpage
228
Abstract
Bubble manipulation in ion-implanted contiguous-disk devices relies on the behavior of charged domain walls in the implanted layer. Those characteristics of the charged walls which most strongly impact the device performance are considered. The effects of the trigonal crystalline anisotropy, the demagnetizing fields arising from the pattern geometry, and applied fields ate predominant factors influencing the charged wall properties. Based on the analyses, operating field margins are derived and some simple guidelines for optimization of device designs are proposed. Some of the ways in which the asymmetric nature of charged wall behavior can be utilized to transfer bubbles from one track to another are also discussed.
Keywords
Magnetic bubble devices; Magnetic bubble domains; Anisotropic magnetoresistance; Crystallization; Demagnetization; Garnets; Geometry; Ion implantation; Magnetic anisotropy; Magnetic films; Magnetization; Perpendicular magnetic anisotropy;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1982.1061790
Filename
1061790
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