• DocumentCode
    987802
  • Title

    The role of charged walls in contiguous-disk bubble devices--A review

  • Author

    Shir, Ching-Cheng ; Sanders, Ian L. ; Lin, Yeong S.

  • Author_Institution
    IBM Research Laboratory, San Jose, CA
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • fDate
    1/1/1982 12:00:00 AM
  • Firstpage
    217
  • Lastpage
    228
  • Abstract
    Bubble manipulation in ion-implanted contiguous-disk devices relies on the behavior of charged domain walls in the implanted layer. Those characteristics of the charged walls which most strongly impact the device performance are considered. The effects of the trigonal crystalline anisotropy, the demagnetizing fields arising from the pattern geometry, and applied fields ate predominant factors influencing the charged wall properties. Based on the analyses, operating field margins are derived and some simple guidelines for optimization of device designs are proposed. Some of the ways in which the asymmetric nature of charged wall behavior can be utilized to transfer bubbles from one track to another are also discussed.
  • Keywords
    Magnetic bubble devices; Magnetic bubble domains; Anisotropic magnetoresistance; Crystallization; Demagnetization; Garnets; Geometry; Ion implantation; Magnetic anisotropy; Magnetic films; Magnetization; Perpendicular magnetic anisotropy;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1982.1061790
  • Filename
    1061790