Title :
Tunnelling in aluminium/aluminium-oxide/palladium junctions: hydrogen-induced variations
Author :
Diligenti, A. ; Stagi, M.
Author_Institution :
UniversitÃ\xa0 di Pisa, Istituto di Elettronica e Telecomunicazioni, Pisa, Italy
Abstract :
The tunnel current of aluminium/aluminium-oxide/palladium (Al/Al2O3/Pd) junctions, obtained by means of sapphire sputtering, has been measured in air and in hydrogen-nitrogen atmosphere at various H2 concentrations ranging from 2 to 100% and at room temperature. It has been found that the tunnel current undergoes a significant change as a consequence of Pd work function lowering induced by the hydrogen. The ratio between the tunnel current in H2 and in air has a value in the range 102¿106, depending on the oxide thickness. The increase of the current occurs in some hundreds of milliseconds if the hydrogen is emitted at atmospheric pressure.
Keywords :
alumina; aluminium; metal-insulator-metal structures; palladium; tunnelling; work function; Al/Al2O3/Pd; H2 concentrations; MIM structure; Pd work function lowering; alumina; metal-insulator-metal junctions; sapphire sputtering; tunnel current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830488