Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS

Author

Torres-Torres, Reydezel ; Murphy-Arteaga, Roberto ; Reynoso-Hernández, J. Apolinar

Author_Institution

Dept. of Electron., Inst. Nacional de Astrofisica, Puebla, Mexico

Volume

52

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1335

Lastpage

1342

Abstract

A model which considers the pad parasitic effects when performing on-wafer S-parameter measurements on microwave devices fabricated on silicon substrates is presented. The model parameters are directly determined using a simple and analytical measurement-based method, allowing the electrical representation of the complete test structure using an equivalent circuit. The validity of the model is verified by achieving excellent agreement between simulated and experimental data up to 55GHz. In addition, a recently reported simplified deembedding procedure is improved and compared to a conventional one to study its validity as frequency increases.

Keywords

CMOS integrated circuits; S-parameters; equivalent circuits; integrated circuit modelling; microwave integrated circuits; microwave measurement; parameter estimation; silicon; RF-CMOS; analytical model; electrical representation; equivalent circuit; microwave devices; on-wafer S-parameter measurement; on-wafer microwave measurement; pad parasitics; parameter extraction; Analytical models; Circuit testing; Electric variables measurement; Equivalent circuits; Microwave devices; Microwave measurements; Parameter extraction; Performance evaluation; Scattering parameters; Silicon; Modeling; RF-CMOS; on-wafer microwave measurements; parameter extraction;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.850644

Filename

1459090