108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors

Author

Wey, Yih-Guei ; Giboney, Kirk S. ; Bowers, John E. ; Rodwell, Mark J.W. ; Silvestre, Pierre ; Thiagarajan, Prabhu ; Robinson, Gary Y.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

5

Issue

11

fYear

1993

Firstpage

1310

Lastpage

1312

Abstract

Connections to bulk bias tees and various mismatched loads degrade the usable frequency response of high-speed photodetectors. Monolithic integration of passive components to enhance the realizable performance of high-bandwidth, long-wavelength photodiodes is demonstrated. Circuits having bias tees and matched resistors integrated with 7- mu m*7- mu m photodiodes show usable electrical bandwidths exceeding 100 GHz.<>

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; integrated optoelectronics; p-i-n photodiodes; photodetectors; resistors; 100 GHz; 108-GHz GaInAs/InP p-i-n photodiodes; 7 micron; GaInAs-InP; bulk bias tees; circuits; electrical bandwidths; frequency response; high-bandwidth; high-speed photodetectors; integrated bias tees; long-wavelength photodiodes; matched resistors; mismatched loads; monolithic integration; passive components; Bandwidth; Circuits; Electrons; Frequency response; Indium phosphide; Laser modes; PIN photodiodes; Reflection; Resistors; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.250053

Filename

250053