Title :
High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure
Author :
Chandrasekhar, S. ; Lunardi, Leda M. ; Gnauck, A.H. ; Hamm, R.A. ; Qua, G.J.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Monolithic photoreceivers, using the base-collector junction of an InP/InGaAs phototransistor structure for a p-i-n photodetector, have been fabricated for the first time. Bandwidths as high as 3 GHz and bit rates as high as 5 Gb/s, with sensitivities of -22.5 dBm and -21.5 dBm for light focused on the p-i-n or on the first stage transistor of the preamplifier, respectively, have been achieved. These results represent the highest operating speed demonstrated for any phototransistor-based receiver.<>
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; infrared detectors; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; phototransistors; 1.53 micron; 3 GHz; 5 Gbit/s; HPT/HBT photoreceivers; InP-InGaAs; InP/InGaAs phototransistor structure; bandwidths; base-collector junction; bit rates; first stage transistor; focused light; high-speed monolithic p-i-n/HBT photoreceivers; monolithic photoreceivers; operating speed; p-i-n photodetector; phototransistor-based receiver; preamplifier; sensitivities; simple phototransistor structure; Epitaxial layers; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optoelectronic devices; PIN photodiodes; Photodetectors; Phototransistors; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
