Title :
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability
Author :
Plouchart, Jean-Olivier ; Zamdmer, Noah ; Kim, Jonghae ; Trzcinski, Robert ; Narasimha, Shreesh ; Khare, Mukesh ; Wagner, Lawrence F. ; Sweeney, Susan L. ; Chaloux, Susan
Author_Institution :
IBM Semicond. R&D Center, Hopewell Junction, NY, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz Ft, 208-GHz Fmax, 1.45-mS/μm gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF/μm2, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications.
Keywords :
CMOS integrated circuits; distributed amplifiers; high-speed integrated circuits; millimetre wave integrated circuits; silicon-on-insulator; system-on-chip; transmission lines; 208 GHz; 243 GHz; 90 nm; CMOS SoC technology; FET; RF circuit; VNCAP; distributed amplifier; high-speed circuits; inductor Q; low parasitic junction capacitance; low-loss microstrip; mm-wave digital circuits; silicon-on-insulator; system on-chip; transmission lines; varactor; CMOS digital integrated circuits; CMOS technology; FETs; Inductors; Millimeter wave technology; Parasitic capacitance; Radio frequency; Silicon on insulator technology; System-on-a-chip; Varactors; Distributed amplifier; RF circuits; divider; high-speed circuits; silicon-on-insulator (SOI) CMOS; system-on-chip (SoC);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.850638
