DocumentCode :
987981
Title :
Current oscillations in semiconductor diodes under streaming instability conditions
Author :
Gru¿¿inskis, V. ; Reklaitis, A.
Author_Institution :
Academy of Sciences of the Lithuanian SSR, Semiconductor Physics Institute, Vilnius, USSR
Volume :
19
Issue :
18
fYear :
1983
Firstpage :
733
Lastpage :
734
Abstract :
The current oscillations with frequency of the order of plasma frequency in the submicron GaAs n+-n-p-p+ structure are obtained by Monte Carlo particle simulation. The streaming plasma instability responsible for the current oscillations at near ballistic transport conditions is shown.
Keywords :
III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; oscillations; p-n homojunctions; semiconductor diodes; III-V semiconductors; Monte Carlo particle simulation; current oscillations; electrical conductivity; near ballistic transport conditions; plasma frequency; semiconductor diodes; streaming plasma instability; submicron GaAs n+-n-p-p + structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830499
Filename :
4248003
Link To Document :
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