Electrical properties of staggered electrode, solution-processed, polycrystalline tetrabenzoporphyrin field-effect transistors

Author

Shea, Patrick B. ; Johnson, Aaron R. ; Ono, Noboru ; Kanicki, Jerzy

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume

52

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1497

Lastpage

1503

Abstract

We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10^-2 cm²/V-s and -15 V, respectively, as well as a subthreshold slope of 1.2 V/decade and an ON-/OFF-current ratio exceeding 10⁵. The device performance and electronic properties of the thin film were used to construct device energy band diagrams. Lastly, the device conduction mechanism is discussed.

Keywords

conduction bands; electric properties; electron mobility; field effect transistors; molecular electronics; organic compounds; semiconductor device testing; thin film transistors; current ratio; electrical property; field-effect mobility; polycrystalline tetrabenzoporphyrin field-effect transistor; staggered electrode; thin film; threshold voltage; Contacts; Costs; Dielectric substrates; Electrodes; FETs; OFETs; Organic materials; Organic semiconductors; Performance analysis; Thin film transistors; Absorbance; cyclic voltammetry; organic field-effect transistors (OFETs); porphyrins; solution processing; staggered electrodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.850616

Filename

1459110