DocumentCode :
988113
Title :
Detector recovery/improvement via elevated-temperature-annealing (DRIVE)-a new approach for Si detector applications in high radiation environment in SLHC
Author :
Li, Zheng ; Verbitskaya, E. ; Eremin, V. ; Ivanov, A. ; Härkönen, J. ; Tuovinen, E. ; Luukka, P.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Volume :
53
Issue :
3
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
1551
Lastpage :
1556
Abstract :
A new approach to improve Si detector radiation hardness/tolerance, termed as DRIVE (Detector Recovery/Improvement Via Elevated-temperature-annealing), has been realized by annealing of oxygen-rich (magnetic Czochralski), proton-irradiated Si detectors (with negative space charge before annealing) at medium temperature for a few hours. The DRIVE approach has been proved to lead to the dramatic decrease in detector leakage current, decrease in detector negative space charge concentration, and an eventual space charge sign inversion from negative to positive. Defect studies have shown significant reduction in overall defect concentrations after annealing.
Keywords :
annealing; hardness; leakage currents; proton effects; silicon radiation detectors; space charge; DRIVE; Detector Recovery/Improvement Via Elevated-Temperature-Annealing; SLHC; Si detector radiation hardness/tolerance; detector leakage current; detector negative space charge concentration; high radiation environment; oxygen-rich detectors; proton-irradiated Si detectors; space charge sign inversion; Annealing; Degradation; Large Hadron Collider; Leak detection; Leakage current; Neutrons; Radiation detectors; Silicon radiation detectors; Space charge; Temperature; CCE; Si detectors; elevated; radiation hardness; space charge sign inversion (SCSI);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2006.872773
Filename :
1645070
Link To Document :
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