Detector recovery/improvement via elevated-temperature-annealing (DRIVE)-a new approach for Si detector applications in high radiation environment in SLHC

Author

Li, Zheng ; Verbitskaya, E. ; Eremin, V. ; Ivanov, A. ; Härkönen, J. ; Tuovinen, E. ; Luukka, P.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

Volume

53

Issue

3

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1551

Lastpage

1556

Abstract

A new approach to improve Si detector radiation hardness/tolerance, termed as DRIVE (Detector Recovery/Improvement Via Elevated-temperature-annealing), has been realized by annealing of oxygen-rich (magnetic Czochralski), proton-irradiated Si detectors (with negative space charge before annealing) at medium temperature for a few hours. The DRIVE approach has been proved to lead to the dramatic decrease in detector leakage current, decrease in detector negative space charge concentration, and an eventual space charge sign inversion from negative to positive. Defect studies have shown significant reduction in overall defect concentrations after annealing.

Keywords

annealing; hardness; leakage currents; proton effects; silicon radiation detectors; space charge; DRIVE; Detector Recovery/Improvement Via Elevated-Temperature-Annealing; SLHC; Si detector radiation hardness/tolerance; detector leakage current; detector negative space charge concentration; high radiation environment; oxygen-rich detectors; proton-irradiated Si detectors; space charge sign inversion; Annealing; Degradation; Large Hadron Collider; Leak detection; Leakage current; Neutrons; Radiation detectors; Silicon radiation detectors; Space charge; Temperature; CCE; Si detectors; elevated; radiation hardness; space charge sign inversion (SCSI);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.872773

Filename

1645070