Title :
Detector recovery/improvement via elevated-temperature-annealing (DRIVE)-a new approach for Si detector applications in high radiation environment in SLHC
Author :
Li, Zheng ; Verbitskaya, E. ; Eremin, V. ; Ivanov, A. ; Härkönen, J. ; Tuovinen, E. ; Luukka, P.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fDate :
6/1/2006 12:00:00 AM
Abstract :
A new approach to improve Si detector radiation hardness/tolerance, termed as DRIVE (Detector Recovery/Improvement Via Elevated-temperature-annealing), has been realized by annealing of oxygen-rich (magnetic Czochralski), proton-irradiated Si detectors (with negative space charge before annealing) at medium temperature for a few hours. The DRIVE approach has been proved to lead to the dramatic decrease in detector leakage current, decrease in detector negative space charge concentration, and an eventual space charge sign inversion from negative to positive. Defect studies have shown significant reduction in overall defect concentrations after annealing.
Keywords :
annealing; hardness; leakage currents; proton effects; silicon radiation detectors; space charge; DRIVE; Detector Recovery/Improvement Via Elevated-Temperature-Annealing; SLHC; Si detector radiation hardness/tolerance; detector leakage current; detector negative space charge concentration; high radiation environment; oxygen-rich detectors; proton-irradiated Si detectors; space charge sign inversion; Annealing; Degradation; Large Hadron Collider; Leak detection; Leakage current; Neutrons; Radiation detectors; Silicon radiation detectors; Space charge; Temperature; CCE; Si detectors; elevated; radiation hardness; space charge sign inversion (SCSI);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.872773