Ion-microbeam probe of high-speed shift registers for SEE Analysis-part I: SiGe

Author

Chu, P. ; Hansen, D.L. ; Doyle, B.L. ; Jobe, K. ; Lopez-Aguado, R. ; Shoga, M. ; Walsh, D.S.

Author_Institution

Boeing Satellite Syst., Los Angeles, CA, USA

Volume

53

Issue

3

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1574

Lastpage

1582

Abstract

We report here results of high-speed single event effect (SEE) testing of SiGe-based ASICs using Sandia National Laboratories ion microbeam probe. Test results are presented for shift registers operating at clock speeds from 0.1 to 6.4 GHz, and provide a way to correlate relative SEU vulnerability to circuit design. The results show that in similar circuits such as "track" and "hold" pairs in the latches, and the emitter followers in the buffers, circuit function can cause significant differences in sensitivity.

Keywords

Ge-Si alloys; flip-flops; high-speed integrated circuits; integrated circuit design; monolithic integrated circuits; semiconductor materials; shift registers; SEE Analysis; SiGe; SiGe-based ASICs; buffers; circuit design; circuit function; clock speed; high-speed shift registers; high-speed single event effect testing; ion-microbeam probe; latches; relative SEU vulnerability; track-hold pairs; Circuit synthesis; Circuit testing; Clocks; Germanium silicon alloys; Laboratories; Latches; Probes; Shift registers; Silicon germanium; Single event upset; Heavy ion; microbeam; silicon germanium; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.861420

Filename

1645073