Transient characteristics of latch-up in bulk CMOS

Transient characteristics of the latch-up turn-on process in bulk CMOS are investigated. A measurement technique that evaluates the threshold trigger pulse current of latch-up and also observes latch-up turn-on transient waveforms is established. Through the comparison between experimental data and precise circuit simulation results, the main factors that determine transient latch-up characteristics are clarified as the base-emitter diffusion capacitors.