DocumentCode
988165
Title
Transient characteristics of latch-up in bulk CMOS
Author
Aoki, Toyohiro ; Kasai, Ryouhei ; Horiguchi, Shogo
Author_Institution
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Volume
19
Issue
19
fYear
1983
Firstpage
758
Lastpage
759
Abstract
Transient characteristics of the latch-up turn-on process in bulk CMOS are investigated. A measurement technique that evaluates the threshold trigger pulse current of latch-up and also observes latch-up turn-on transient waveforms is established. Through the comparison between experimental data and precise circuit simulation results, the main factors that determine transient latch-up characteristics are clarified as the base-emitter diffusion capacitors.
Keywords
field effect integrated circuits; large scale integration; transients; LSI; base-emitter diffusion capacitors; bulk CMOS; latch-up turn-on process; threshold trigger pulse current; transient characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830517
Filename
4248027
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