GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process

Author

Hong, Choong ; Kasemset, D. ; Kim, May E. ; Milano, R.A.

Author_Institution

Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA

Volume

19

Issue

19

fYear

1983

Firstpage

759

Lastpage

760

Abstract

The fabrication and characterisation of GaAlAs buried-heterostructure laser diodes having low threshold currents (10 mA), high uniformity and planar surface structure, and grown exclusively by metalorganic chemical vapour deposition (MOCVD) are described. Single-longitudinal and transverse-mode operation of these devices has been observed. In addition, considerable suppression of relaxation resonance effects has been observed in the high-frequency modulation of these devices.

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; laser modes; semiconductor growth; semiconductor junction lasers; BH laser; GaAlAs buried-heterostructure lasers; characterisation; fabrication; high uniformity; high-frequency modulation; low threshold currents; metalorganic chemical vapour deposition; planar surface structure; relaxation resonance effects suppression; semiconductor laser; single longitudinal mode operation; transverse-mode operation; two-step MOCVD process;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19830518

Filename

4248028