Drain Breakdown Voltage in MuGFETs: Influence of Physical Parameters

Author

Lee, Chi Woo ; Afzalian, Aryan ; Yan, Ran ; Akhavan, Nima Dehdashti ; Xiong, Weize ; Colinge, Jean-Pierre

Author_Institution

Tyndall Nat. Inst., Cork

Volume

55

Issue

12

fYear

2008

Firstpage

3503

Lastpage

3506

Abstract

This paper analyzes the drain breakdown voltage of multigate MOSFETs and the influence of parameters such as doping concentration, fin width, and gate length. The good electrostatic control of the active area by the multigate structure improves the drain breakdown voltage, which increases as the fin width is decreased. Increasing the channel doping concentration improves the drain breakdown voltage as well.

Keywords

MOSFET; electrostatics; impact ionisation; semiconductor device breakdown; semiconductor doping; silicon-on-insulator; MuGFET; Si-SiO₂; channel doping concentration; doping concentration; drain breakdown voltage; electrostatic control; fin width; gate length; impact ionization; multigate MOSFET; physical parameters; silicon-on-insulator MOSFET; Boron; CMOS process; Doping; Electric breakdown; Electrodes; Etching; Impact ionization; Lithography; MOSFETs; Silicon on insulator technology; Breakdown voltage; floating-body effects; impact ionization; multiple-gate MOSFET (MuGFET); silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2006546

Filename

4674550