DocumentCode
988193
Title
Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes
Author
Jan, Sun-Rong ; Cheng, Tzu-Huan ; Hung, Tzer-An ; Kuo, Ping-Sheng ; Liao, Ming Han ; Deng, Yu ; Liu, Chee Wee
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ, Taipei
Volume
55
Issue
12
fYear
2008
Firstpage
3590
Lastpage
3593
Abstract
The tunneling current of Pt/oxide/n-6H-SiC tunneling diodes was used for electroluminescence (EL). The negative gate bias can inject electrons from Pt to n-SiC and leads to a radiative donor-acceptor pair (DAP) transition. The blue EL at room temperature is observed at negative gate bias, and the intensity increases with increasing drive current. The DAP transition is enhanced by the electric field due to carrier tunneling. Thus, strong luminescence is observed at negative (inversion) bias, while no luminescence is observed at positive (accumulation) bias.
Keywords
MIS devices; electroluminescent devices; light emitting diodes; platinum; silicon compounds; tunnel diodes; wide band gap semiconductors; DAP transition; Pt-SiO2-SiC; blue electroluminescence; carrier tunneling; metal-insulator-semiconductor light-emitting diode; negative gate bias; radiative donor-acceptor pair transition; temperature 293 K to 298 K; tunneling current; tunneling diodes; Digital audio players; Electroluminescence; Germanium silicon alloys; Light emitting diodes; Luminescence; Photonic band gap; Semiconductor diodes; Silicon carbide; Silicon germanium; Tunneling; 6H-Silicon carbide (SiC); Electroluminescence (EL); metal–insulator–semiconductor (MIS) light-emitting diode (LED);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.2006117
Filename
4674551
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