• DocumentCode
    988193
  • Title

    Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes

  • Author

    Jan, Sun-Rong ; Cheng, Tzu-Huan ; Hung, Tzer-An ; Kuo, Ping-Sheng ; Liao, Ming Han ; Deng, Yu ; Liu, Chee Wee

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ, Taipei
  • Volume
    55
  • Issue
    12
  • fYear
    2008
  • Firstpage
    3590
  • Lastpage
    3593
  • Abstract
    The tunneling current of Pt/oxide/n-6H-SiC tunneling diodes was used for electroluminescence (EL). The negative gate bias can inject electrons from Pt to n-SiC and leads to a radiative donor-acceptor pair (DAP) transition. The blue EL at room temperature is observed at negative gate bias, and the intensity increases with increasing drive current. The DAP transition is enhanced by the electric field due to carrier tunneling. Thus, strong luminescence is observed at negative (inversion) bias, while no luminescence is observed at positive (accumulation) bias.
  • Keywords
    MIS devices; electroluminescent devices; light emitting diodes; platinum; silicon compounds; tunnel diodes; wide band gap semiconductors; DAP transition; Pt-SiO2-SiC; blue electroluminescence; carrier tunneling; metal-insulator-semiconductor light-emitting diode; negative gate bias; radiative donor-acceptor pair transition; temperature 293 K to 298 K; tunneling current; tunneling diodes; Digital audio players; Electroluminescence; Germanium silicon alloys; Light emitting diodes; Luminescence; Photonic band gap; Semiconductor diodes; Silicon carbide; Silicon germanium; Tunneling; 6H-Silicon carbide (SiC); Electroluminescence (EL); metal–insulator–semiconductor (MIS) light-emitting diode (LED);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2006117
  • Filename
    4674551