Title :
Total ionizing dose effects on the noise performances of a 0.13 μm CMOS technology
Author :
Re, Valerio ; Manghisoni, Massimo ; Ratti, Lodovico ; Speziali, Valeria ; Traversi, Gianluca
Author_Institution :
Universita di Bergamo, Pavia, Italy
fDate :
6/1/2006 12:00:00 AM
Abstract :
This paper presents a study of the ionizing radiation tolerance of 0.13 μm CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with 60Co γ-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.
Keywords :
1/f noise; CMOS analogue integrated circuits; gamma-ray effects; monolithic integrated circuits; semiconductor device noise; 1/f noise; 60Co irradiation; CMOS transistors; ionizing radiation tolerance; noise performances; rad-hard analog integrated circuits; signal-noise parameters; static parameters; threshold voltage shift; total ionizing dose effects; Analog integrated circuits; CMOS analog integrated circuits; CMOS technology; Condition monitoring; Integrated circuit noise; Integrated circuit technology; Ionizing radiation; Noise generators; Radiation hardening; Threshold voltage; Deep submicron; MOSFET; ionizing radiation; noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.871802
