Evaluation of the impact of layout on device and analog circuit performance with lateral asymmetric channel MOSFETs

Author

Kumar, D. Vinay ; Narasimhulu, K. ; Reddy, P.S. ; Shojaei-Baghini, M. ; Sharma, Dinesh K. ; Patil, Mahesh B. ; Rao, V. Ramgopal

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

Volume

52

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1603

Lastpage

1609

Abstract

Lateral asymmetric channel (LAC) or single halo devices have been reported to exhibit excellent short channel behavior in the sub-100-nm regime. In this paper, we have quantified the performance degradation in LAC devices due to fingered layouts. Our mixed-mode two-dimensional simulation results show that though the fingered layout of the device limits the performance of these MOSFETs, they still show superior performance over the conventional devices in the sub-100-nm channel length regime. We also present the simulation results of a two-stage operational amplifier with LAC and conventional devices using a 0.13-μm technology with the help of look-up table simulations. Our results show that for the given design specifications, an OPAMP layout with conventional devices occupies 18% more chip area compared to the LAC device.

Keywords

CMOS analogue integrated circuits; MOSFET; analogue integrated circuits; circuit simulation; integrated circuit layout; table lookup; LAC devices; OPAMP layout; analog circuit performance; channel engineering; fingered lay-out; lateral asymmetric channel MOSFETs; look-up table simulations; mixed-mode 2D simulation; short channel behavior; single halo devices; sub-100-nm regime; two-stage operational amplifier; Analog circuits; Circuit optimization; Circuit simulation; Degradation; Doping profiles; Helium; Los Angeles Council; MOSFETs; Operational amplifiers; Table lookup; Analog circuit; MOSFET; channel engineering; lateral asymmetric channel (LAC); look-up table (LUT); quasi-static;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.850941

Filename

1459125