DocumentCode :
988295
Title :
Efficiencies of coated and perforated semiconductor neutron detectors
Author :
Shultis, J. Kenneth ; McGregor, Douglas S.
Author_Institution :
Mech. & Nucl. Eng. Dept., Kansas State Univ., Manhattan, KS, USA
Volume :
53
Issue :
3
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
1659
Lastpage :
1665
Abstract :
Previous experimental results indicated that boron-filled perforations within a semiconductor diode detector increase the thermal neutron detection efficiency. In this paper, two basic perforation designs, circular holes and parallel trenches, are analyzed using a simple Monte Carlo model to estimate their potential as high-efficiency thermal neutron detectors. The modeling results indicate that thermal-neutron intrinsic detection efficiencies exceeding 25% can be realized for single coated devices, and efficiencies exceeding 50% can be realized for doubled or "sandwiched" devices.
Keywords :
Monte Carlo methods; neutron detection; semiconductor counters; boron-filled perforation design; circular holes; coated semiconductor neutron detectors; doubled devices; parallel trenches; perforated semiconductor neutron detectors; sandwiched devices; semiconductor diode detector; simple Monte Carlo model; single coated devices; thermal neutron detectors; Coatings; Detectors; Electromagnetic wave absorption; Helium; Microscopy; Monte Carlo methods; Neutrons; Semiconductor diodes; Semiconductor materials; Stationary state; Perforated detector; semiconductor neutron detector;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2006.872639
Filename :
1645084
Link To Document :
بازگشت