Title :
The fast neutron response of 4H silicon carbide semiconductor radiation detectors
Author :
Ruddy, Frank H. ; Dulloo, Abdul R ; Seidel, John G. ; Das, Mrinal K. ; Ryu, Sei-Hyung ; Agarwal, Anant K.
Author_Institution :
Dept. of Sci. & Technol., Westinghouse Electr. Corp., Pittsburgh, PA, USA
fDate :
6/1/2006 12:00:00 AM
Abstract :
Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the 28Si(n,αi) reaction set of six energy levels in the product 25Mg nucleus, and pulse height defect differences between the observed 12C(n,α0)28 Si(n,αi) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed.
Keywords :
alpha-particle detection; neutron-nucleus reactions; nuclei with mass number 20 to 38; nuclei with mass number 6 to 19; silicon radiation detectors; 4H silicon carbide semiconductor radiation detectors; 12C(n,alpha0); 28Si(n,alphai); SiC p-i-n diodes; energy spectrometry; fast neutron response; fission neutron fields; fusion neutron fields; multiple reaction peaks; neutron spectroscopy; pulse height defect differences; radiation detection; Gamma ray detection; Gamma ray detectors; Neutrons; Permission; Radiation detectors; Schottky diodes; Semiconductor radiation detectors; Silicon carbide; Spectroscopy; Temperature; Neutron spectroscopy; radiation detection; silicon carbide;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.875151
