Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

Author

Ortiz-Conde, Adelmo ; García-Sánchez, Francisco J. ; Malobabic, Slavica

Author_Institution

Solid State Electron. Lab., Simon Bolivar Univ., Caracas, Venezuela

Volume

52

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1669

Lastpage

1672

Abstract

We extend our previous Lambert function-based analytic solution for the surface potential of undoped-body single-gate bulk MOSFETs to offer an explicit analytic solution of the surface potential of undoped-body symmetric dual-gate devices. The error produced by the proposed solution compared to exact results is reasonably small for typical device dimensions and bias conditions.

Keywords

MOSFET; semiconductor device models; surface potential; Lambert function; MOS compact modeling; bias conditions; channel potential; intrinsic channel; surface potential; symmetric DG MOSFET; undoped body MOS; undoped symmetric dual-gate MOSFET; undoped-body single-gate bulk MOSFET; undoped-body symmetric dual-gate devices; Degradation; Doping; Equations; MOSFET circuits; Nanoscale devices; Potential well; Semiconductor device modeling; Semiconductor films; Silicon on insulator technology; Voltage; Intrinsic channel; MOS compact modeling; symmetric DG MOSFET; undoped body MOS;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.850629

Filename

1459136