Title :
New Ga0.47In0.53As sheet-charge field-effect transistor for long-wavelength optoelectronic integration
Author :
Chen, C.Y. ; Alavi, K. ; Cho, Andrew Y. ; Garbinski, P.A. ; Pang, Y.M.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
We demonstrate a Ga0.47In0.53As field-effect transistor with an extremely highly doped (2 × 1018 cm¿3 and ultrathin (140 Å) channel layer. A transconductance of 80 mS/mm was measured for a device with a gate length of 2 ¿m. A photo-conductive detector made from this structure is also reported. This structure may be useful for integrated photo-receiver applications.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; photodetectors; phototransistors; FET; Ga0.47In0.53As sheet-charge field-effect transistor; GaInAs transistor; highly doped channel layer; integrated photoreceiver applications; long-wavelength optoelectronic integration; photoconductive detector; transconductance; ultrathin channel layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830539
