988435

Erratum: Thermally accelerated degradation of 1.3 ¿m BH lasers

Nakano, Yoshiaki ; Fukuda, Motohisa ; Sudo, H. ; Fujita, O. ; Iwane, G.

19

19

1983

803

III-V semiconductors; ageing; gallium arsenide; indium compounds; life testing; 1.3 microns; ACC lifetests; CW threshold current; III-V semiconductors; InGaAsP lasers; buried heterostructure; high-stress aging; thermally accelerated degradation;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19830547

4248063