• DocumentCode
    988513
  • Title

    Nano-Electro-Mechanical Nonvolatile Memory (NEMory) Cell Design and Scaling

  • Author

    Choi, Woo Young ; Osabe, Taro ; Liu, Tsu-Jae King

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul
  • Volume
    55
  • Issue
    12
  • fYear
    2008
  • Firstpage
    3482
  • Lastpage
    3488
  • Abstract
    The design and scalability of a nano-electro- mechanical memory (NEMory) cell are investigated via analytical modeling and finite element analysis (FEA) simulation. Proportionate scaling of all the cell dimensions provides for improved storage density together with low operating voltages and fast program/erase times. From FEA simulation, a 75-nm-long aluminum cantilever-beam NEMory cell is expected to have sub-1-ns erase and program times for sub-l-V operation. Because there are practical limits to beam and air-gap thickness scaling, it will be difficult to achieve low-voltage operation for very short beams (Lbeam < 50 nm), unless a beam material with a low Young´s modulus is used. Fracture strain imposes a fundamental limit for beam-length scaling. Thus, a high fracture-strain beam material is desirable to extend NEMory scalability.
  • Keywords
    Young´s modulus; aluminium; finite element analysis; flash memories; Young modulus; aluminum cantilever-beam NEMory cell; beam-length scaling; finite element analysis simulation; flash memory; nano-electro-mechanical nonvolatile memory cell design; Air gaps; Aluminum; Analytical models; Consumer electronics; Electrodes; Finite element methods; Flash memory; Low voltage; Nonvolatile memory; Scalability; Cell design; finite element analysis (FEA); nano-electro-mechanical nonvolatile memory (NEMory); scaling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2006540
  • Filename
    4674586