DocumentCode
988513
Title
Nano-Electro-Mechanical Nonvolatile Memory (NEMory) Cell Design and Scaling
Author
Choi, Woo Young ; Osabe, Taro ; Liu, Tsu-Jae King
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul
Volume
55
Issue
12
fYear
2008
Firstpage
3482
Lastpage
3488
Abstract
The design and scalability of a nano-electro- mechanical memory (NEMory) cell are investigated via analytical modeling and finite element analysis (FEA) simulation. Proportionate scaling of all the cell dimensions provides for improved storage density together with low operating voltages and fast program/erase times. From FEA simulation, a 75-nm-long aluminum cantilever-beam NEMory cell is expected to have sub-1-ns erase and program times for sub-l-V operation. Because there are practical limits to beam and air-gap thickness scaling, it will be difficult to achieve low-voltage operation for very short beams (Lbeam < 50 nm), unless a beam material with a low Young´s modulus is used. Fracture strain imposes a fundamental limit for beam-length scaling. Thus, a high fracture-strain beam material is desirable to extend NEMory scalability.
Keywords
Young´s modulus; aluminium; finite element analysis; flash memories; Young modulus; aluminum cantilever-beam NEMory cell; beam-length scaling; finite element analysis simulation; flash memory; nano-electro-mechanical nonvolatile memory cell design; Air gaps; Aluminum; Analytical models; Consumer electronics; Electrodes; Finite element methods; Flash memory; Low voltage; Nonvolatile memory; Scalability; Cell design; finite element analysis (FEA); nano-electro-mechanical nonvolatile memory (NEMory); scaling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.2006540
Filename
4674586
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