Title :
Atomic-Layer-Deposited Alumina
Coating on Thin-Film Cryoresistors
Author :
Hahtela, Ossi M. ; Satrapinski, Alexandre F. ; Sievilä, Päivi H. ; Chekurov, Nikolai
Author_Institution :
Centre for Metrol. & Accreditation (MIKES), Espoo
fDate :
4/1/2009 12:00:00 AM
Abstract :
Metal-alloy (Ni-Cr-Cu-Al-Ge) thin-film resistors were coated with alumina (Al2O3) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2-300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and repeatability of high-value, thin-film resistors (100-500 kOmega). The drift rate of the resistance due to the native oxidation at room temperature was reduced from -2.45 times10-6 h-1 for a nonaged uncoated resistor to 0.03 times10-6 h-1 for an alumina-coated resistor. It was shown that the additional 15-nm-thick alumina coating does not significantly change the thermoelectrical properties of the metal-alloy, thin-film resistors.
Keywords :
alumina; atomic layer deposition; protective coatings; thin film resistors; Al2O3; atomic-layer-deposited alumina coating; metal-alloy thin-film resistors; protective dielectric alumina coating; resistance 100 kohm to 500 kohm; temperature 4.2 K to 300 K; thin-film cryoresistors; thin-film resistors; Coatings; dielectric films; resistance measurement; stability; thin-film resistors;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2008.2006964