Title :
Receiver sensitivity of InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers at 1.5¿1.6 ¿m region
Author :
Matsushima, Y. ; Seki, N. ; Akiba, Shigeyuki ; Noda, Yasuo ; Kushiro, Y.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
The experimental receiver sensitivity of an InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers is reported. The receiver sensitivity, measured at 1.5¿1.6 ¿m wavelength and 280 Mbit/s, was ¿38.7 dBm for a 10¿9 error rate, although the optimisations were not performed. But this sensitivity was better than that of a p+¿n Ge-APD by 2.5 dB at 1.59 ¿m wavelength.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; p-n heterojunctions; sensitivity; 1.5 to 1.6 micron wavelength region; 280 Mbit/s; III-V semiconductors; InGaAs/InP; InGaAsP buffer layers; heterostructure avalanche photodiode; optical communication equipments; receiver sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830575
