Hall effect in amorphous Fe1-xBxfilms

Hall resistivity, spontaneous Rs, extraordinary R1, and ordinary R0Hall coefficient investigations on Fe-B sputtered films in a wide boron composition and temperature regime are discussed. From the temperature dependence of the initial slope of the Hall curve, Curie Tcand crystallization Tktemperatures were determined. Ordinary Hall coefficients were measured for samples with Tk> Tcfrom the paramagnetic region. It is concluded that electrical transport in amorphous Fe-B films and amorphous Fe-Si and Fe-Ge films are different.