Title :
Optical injection locking of X-band FET oscillator using coherent mixing of GaAlAs lasers
Author :
Goldberg, L. ; Rauscher, C. ; Weller, J.F. ; Taylor, H.F.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
A 9.6 GHz GaAs FET oscillator was optically injection locked at the fundamental frequency. The locking bandwidth was 1.6 MHz. The optical injecting signal was generated using coherent mixing of two semiconductor lasers injection locked by different FM sidebands of another laser.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; frequency stability; gallium arsenide; laser beam applications; microwave oscillators; semiconductor junction lasers; 1.6 MHz; 9.6 GHz; FM sidebands; GaAlAs lasers; GaAs MESFET; III-V semiconductors; X-band; coherent mixing; frequency stabilisation; laser beam applications; locking bandwidth; microwave oscillators; optical injection locking; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830577
