• DocumentCode
    988794
  • Title

    Thyristors and IGBTs with integrated self-protection functions

  • Author

    Niedernostheide, F.-J. ; Schulze, H.-J. ; Felsl, H.P. ; Laska, T. ; Kellner-Werdehausen, U. ; Lutz, J.

  • Author_Institution
    Infineon Technol. AG, Munich
  • Volume
    1
  • Issue
    5
  • fYear
    2007
  • fDate
    10/1/2007 12:00:00 AM
  • Firstpage
    315
  • Lastpage
    320
  • Abstract
    Recent activities in insulated gate bipolar transistor (IGBT) and thyristor development focus on the integration of protection functions in order to improve the reliability of the entire electronic system. It is shown how various protection functions can be integrated into symmetric and asymmetric light-triggered thyristors with a blocking capability up to 13 kV. Furthermore, different measures to provide IGBTs with an overvoltage protection are discussed and experimental results revealing the successful implementation of such a protection function are presented.
  • Keywords
    insulated gate bipolar transistors; overvoltage protection; power system reliability; thyristors; asymmetric light-triggered thyristors; insulated gate bipolar transistor; overvoltage protection; power system reliability;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds:20060369
  • Filename
    4389766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=988794