Title :
Linear tunable COMFET transconductor
Author :
Huang, Shih-Chia ; Ismail, Mahamod
Author_Institution :
Ohio State Univ., Columbus, OH, USA
fDate :
3/4/1993 12:00:00 AM
Abstract :
A linear tunable transconductor is designed with the use of linear COMposite n-channel MOSFETs (COMFETs) and CMOS COMposite FETs as basic cells. With crosscoupling, a differential linear relation is achieved with a THD at 1 kHz of 0.776% for a differential voltage of +or-4 V. The design of the transconductor demonstrates that COMFET devices can be successfully used as standard cells in modulator analogue VLSI circuits. The transconductor performance at subthreshold is also discussed.
Keywords :
CMOS integrated circuits; VLSI; analogue processing circuits; linear integrated circuits; tuning; CMOS composite MOSFET; COMFET; crosscoupling; linear tunable transconductor; modulator analogue VLSI circuits; n-channel; standard cells; subthreshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930307
