Title :
State-of-the-art technologies and devices for high-voltage integrated circuits
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge
fDate :
10/1/2007 12:00:00 AM
Abstract :
The current status of high-voltage power semiconductor devices and technologies for high-voltage integrated circuits is reviewed and the new trends in this field are discussed. The paper focuses on the concepts of the novel reduced surface field and state-of-the-art silicon technologies such as high-voltage silicon on insulator, which are expected to play an increasingly important role in power system on-chip manufacturing. Lateral devices such as LDMOSFETs, superjunctions and lateral insulated gate bipolar transistors are discussed. The paper also touches on emerging technologies such as unified MEMS-IC for enhanced breakdown capability and isolation. Finally, an overview of the fierce fight of technology survival in terms of specific on-state resistance against breakdown voltage is given.
Keywords :
power integrated circuits; silicon-on-insulator; MEMS IC; breakdown capability; breakdown voltage; high voltage integrated circuits; high voltage power semiconductor devices; lateral devices; silicon on insulator; silicon technologies; state of the art technologies; state resistance; surface field;
Journal_Title :
Circuits, Devices & Systems, IET
DOI :
10.1049/iet-cds:20070025