DocumentCode :
988876
Title :
Residual stress effect on electron mobility in ZMR-SOI
Author :
Zhang, Peng ; Tsien, P.
Author_Institution :
Tsinghua Univ., Beijing, China
Volume :
29
Issue :
5
fYear :
1993
fDate :
3/4/1993 12:00:00 AM
Firstpage :
463
Lastpage :
464
Abstract :
N-channel enhancement-mode MOSFETs have been fabricated in silicon-on-insulator (SOI) films prepared by both infra-red and laser zone-melting recrystallisation (ZMR). The SOI films are subjected to a lateral tensile stress due to the thermal expansion coefficient difference between silicon and silicon dioxide. The devices in the stressed films exhibit higher surface electron mobilities than those in bulk single crystal silicon. This phenomenon has been attributed to the influence of the stress through the change of the band structure as well as redistribution of carriers in k space.
Keywords :
carrier mobility; elemental semiconductors; insulated gate field effect transistors; recrystallisation; semiconductor thin films; semiconductor-insulator boundaries; silicon; stress effects; thermal expansion; zone melting; IR ZMR; MOSFETs; Si-SiO 2; TCE difference; ZMR-SOI; band structure; carrier-redistribution; electron mobility; enhancement-mode; laser zone-melting recrystallisation; lateral tensile stress; n-channel device; stressed films; surface electron mobilities; thermal expansion coefficient;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930309
Filename :
250269
Link To Document :
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