Residual stress effect on electron mobility in ZMR-SOI

Author

Zhang, Peng ; Tsien, P.

Author_Institution

Tsinghua Univ., Beijing, China

Volume

29

Issue

5

fYear

1993

fDate

3/4/1993 12:00:00 AM

Firstpage

463

Lastpage

464

Abstract

N-channel enhancement-mode MOSFETs have been fabricated in silicon-on-insulator (SOI) films prepared by both infra-red and laser zone-melting recrystallisation (ZMR). The SOI films are subjected to a lateral tensile stress due to the thermal expansion coefficient difference between silicon and silicon dioxide. The devices in the stressed films exhibit higher surface electron mobilities than those in bulk single crystal silicon. This phenomenon has been attributed to the influence of the stress through the change of the band structure as well as redistribution of carriers in k space.

Keywords

carrier mobility; elemental semiconductors; insulated gate field effect transistors; recrystallisation; semiconductor thin films; semiconductor-insulator boundaries; silicon; stress effects; thermal expansion; zone melting; IR ZMR; MOSFETs; Si-SiO₂; TCE difference; ZMR-SOI; band structure; carrier-redistribution; electron mobility; enhancement-mode; laser zone-melting recrystallisation; lateral tensile stress; n-channel device; stressed films; surface electron mobilities; thermal expansion coefficient;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930309

Filename

250269