DocumentCode :
988901
Title :
Behaviour of device structures based on IDT-launched bulk acoustic waves in a parallel-sided plate of lithium niobate
Author :
Bloch, P.D. ; Doe, N.G. ; Paige, E.G.S.
Author_Institution :
University of Oxford, Department of Engineering Science, Oxford, UK
Volume :
19
Issue :
21
fYear :
1983
Firstpage :
871
Lastpage :
873
Abstract :
We present device responses due to fast shear and longitudinal waves, which propagate between a pair of IDTs on an upper surface via a reflection from the lower surface of a parallel-sided plate of 41°-rotated Y-cut lithium niobate. Single-mode response can be obtained by removing unwanted modes using saw cuts in the crystal substrate. Centre-frequency and bandwidth enhancement of a factor of two or more are achievable compared with the SAW response of the same IDTs.
Keywords :
lithium compounds; ultrasonic devices; ultrasonic transducers; IDT; IDTs; LiNbO3 plate; Y-cut; bandwidth enhancement; bulk acoustic waves; centre-frequency enhancement; interdigital transducers; longitudinal waves; parallel-sided plate; shear waves; single-mode response;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830593
Filename :
4248121
Link To Document :
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