DocumentCode
988947
Title
Low threshold ridge waveguide laser at 1.55 ¿m
Author
Kaminow, I.P. ; Stulz, L.W. ; Ko, J.-S. ; Miller, B.I. ; Feldman, R.D. ; DeWinter, J.C. ; Pollack, M.A.
Author_Institution
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume
19
Issue
21
fYear
1983
Firstpage
877
Lastpage
879
Abstract
Fundamental-transverse-mode ridge waveguide lasers have been operated at 1.55 ¿m with threshold current as low as 42 mA. The threshold of fabrication and performance are similar to that of 1.3 ¿m ridge lasers, including the large modulation bandwidth.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP structure; fundamental transverse mode; modulation bandwidth; ridge waveguide lasers; semiconductor junction lasers; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830598
Filename
4248126
Link To Document