Title :
Damage-free passivation of InAlAs/InGaAs HFETs by use of ECR-deposited SiN
Author :
Newson, D.J. ; Murrell, A.J. ; Grimwood, R.C. ; Henning, I.D.
Author_Institution :
BT Labs., Ipswich, UK
fDate :
3/4/1993 12:00:00 AM
Abstract :
Silicon nitride deposited by electron-cyclotron resonance has been used to fully passivate InAlAs/InGaAs HFETs. The passivation process did not increase the gate leakage current, and passivated 1 mu m HFETs had a breakdown voltage of 15 V. These results illustrate the potential of ECR nitride for passivation of InP-based semiconductor devices.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; passivation; semiconductor technology; silicon compounds; sputter deposition; sputtered coatings; 1 micron; 15 V; ECR nitride; ECR-deposited SiN; HEMT; HFETs; InAlAs-InGaAs-InP; InP based devices; Si 3N 4 passivation; breakdown voltage; damage-free passivation; electron-cyclotron resonance; gate leakage current; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930316
