Title :
Modelling the threshold voltage of short-channel silicon-on-insulator MOSFETs
Author :
Imam, M. Ashraf ; Osman, Mohd Azam ; Nintunze, N.
Author_Institution :
Micron Semiconductor Inc., Boise, ID, USA
fDate :
3/4/1993 12:00:00 AM
Abstract :
A simple analytical model for the threshold voltage of short-channel, thin-film, fully-depleted silicon-on-insulator MOSFETs is presented. The model is based on the analytical solution for the two-dimensional potential distribution in the silicon film, which is taken as the sum of the long-channel solution to the Poisson equation and the short-channel solution to the Laplace equation. The model shows close agreement with numerical PISCES simulation results. The equivalence between the proposed model and the parabolic model of Young (1989) is also proven.
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; Laplace equation; MOSFETs; Poisson equation; Si; analytical model; fully depleted SOI; fully-depleted silicon-on-insulator MOSFETs; short-channel; thin-film; threshold voltage; two-dimensional potential distribution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930317
