DocumentCode
988963
Title
Modelling the threshold voltage of short-channel silicon-on-insulator MOSFETs
Author
Imam, M. Ashraf ; Osman, Mohd Azam ; Nintunze, N.
Author_Institution
Micron Semiconductor Inc., Boise, ID, USA
Volume
29
Issue
5
fYear
1993
fDate
3/4/1993 12:00:00 AM
Firstpage
474
Lastpage
475
Abstract
A simple analytical model for the threshold voltage of short-channel, thin-film, fully-depleted silicon-on-insulator MOSFETs is presented. The model is based on the analytical solution for the two-dimensional potential distribution in the silicon film, which is taken as the sum of the long-channel solution to the Poisson equation and the short-channel solution to the Laplace equation. The model shows close agreement with numerical PISCES simulation results. The equivalence between the proposed model and the parabolic model of Young (1989) is also proven.
Keywords
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; Laplace equation; MOSFETs; Poisson equation; Si; analytical model; fully depleted SOI; fully-depleted silicon-on-insulator MOSFETs; short-channel; thin-film; threshold voltage; two-dimensional potential distribution;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930317
Filename
250277
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