High-Performance InP-Based Photodetector in an Amplifier Layer Stack on Semi-Insulating Substrate

Author

Xu, Ling ; Nikoufard, Mahmoud ; Leijtens, Xaveer J M ; De Vries, Tjibbe ; Smalbrugge, Elbertus ; Nötzel, Richard ; Oei, Yok Siang ; Smit, Meint K.

Author_Institution

COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven

Volume

20

Issue

23

fYear

2008

Firstpage

1941

Lastpage

1943

Abstract

A waveguide photodetector (PD) based on semi-insulating (SI) indium phosphide (InP) was simulated, designed, and fabricated. The layer stack for this PD was optimized for use as an optical amplifier or laser and it can be combined with the passive components. By using an SI substrate and deep etching, a small, efficient, and high-speed PD was made, which allows for easy integration of source, detector, and passive optical components on a single chip. A 3-dB bandwidth of 35 GHz and 0.25 A/W external radio-frequency reponsivity is measured at 1.55-mum wavelength for a 1.5-mum-wide and 30-mum-long waveguide PD at -4-V bias voltage. The polarization dependence in the responsivity is less than 0.27 dB.

Keywords

III-V semiconductors; indium compounds; integrated optics; photodetectors; semiconductor optical amplifiers; InP; amplifier layer stack; frequency 35 GHz; high performance photodetector; passive optical components; semiconductor optical amplifier; semiinsulating substrate; single chip; size 1.5 mum; size 30 mum; voltage -4 V; waveguide photodetector; wavelength 1.55 mum; Etching; High speed optical techniques; Indium phosphide; Optical amplifiers; Optical devices; Optical waveguides; Photodetectors; Semiconductor optical amplifiers; Stimulated emission; Waveguide lasers; Photodetector (PD); semi-insulating (SI); semiconductor optical amplifier (SOA);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2005425

Filename

4674631