Title :
Low contact resistance nonalloyed ohmic contacts to Zn-implanted P+ GaAs
Author :
Su, Chun-Yi ; Stolte, Christian
Author_Institution :
Hewlett Packard Laboratories, Palo Alto, USA
Abstract :
Contact resistance of nonalloyed metal contacts to Zn-implanted shallow (~1000 Å) p+ GaAs layers was investigated. Contact resistance as low as 9×10¿7 ¿cm2 was achieved for evaporated Ti/Pt/Au contacts to Zn 40 keV and Zn 100 keV double-implanted layers with a peak concentration of 7×1019/cm3.
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; ion implantation; ohmic contacts; Ti/Pi/Au contacts; Zn implanted p+-GaAs layers; contact resistance; nonalloyed metal contacts; ohmic contacts; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830607
