Title :
Quarter-micron gate length microwave high electron mobility transistor
Author :
Chao, P.C. ; yu, tao ; Smith, P.M. ; Wanuga, S. ; Hwang, James C. M. ; Perkins, W.H. ; Lee, Hongseok ; Eastman, L.F. ; Wolf, E.D.
Author_Institution :
General Electric Company, Electronics Laboratory, Syracuse, USA
Abstract :
Quarter-micron gate length high electron mobility transistors have been fabricated using an electron-beam direct-writing technique. A maximum stable gain of 10 dB at 18 GHz has been measured at room temperature. A room-temperature cutoff frequency fT as high as 45 GHz has also been obtained.
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; field effect transistors; gallium arsenide; solid-state microwave devices; 0.25 micron gate length; 18 GHz; GaAs/n-Al0.3Ga0.7As; HEMT; electron beam lithography; electron-beam direct-writing technique; maximum stable gain; microwave high electron mobility transistor; quarter micron gate length; room-temperature cutoff frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830609
