Title :
MBE-grown InGaAlAs 1.5 mu m MQW ridge waveguide laser diodes with AlAs etch stop layers
Author :
Choi, Won-Yong ; Broekaert, T.P.E. ; Fonstad, C.G.
Author_Institution :
MIT, Cambridge, MA, USA
fDate :
3/4/1993 12:00:00 AM
Abstract :
Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAlAs materials lattice-matched to InP. A 3 nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; gradient index optics; indium compounds; laser transitions; molecular beam epitaxial growth; optical waveguides; optical workshop techniques; semiconductor lasers; 1.5 micron; AlAs etch stop layers; GRINSCH; InGaAlAs-InP; MBE-grown; MQW; etch stop layer; laser diodes; lattice-matched; multiple quantum well; pseudomorphic AlAs layer; ridge stripe device fabrication; ridge waveguide; selective etching; semiconductor lasers; succinic acid solution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930323
