Title :
Integrated PINFET optical receiver with high-frequency InP-MISFET
Author :
Kasahara, K. ; Sugimoto, M. ; Nomura, H. ; Suzuki, S.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Monolithic integration of an InGaAsP PIN photodiode with an n-channel enhancement InP-MISFET is reported. Photo-current amplification characteristics at 1000 Mbit/s have been achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; monolithic integrated circuits; optical communication equipment; photodiodes; preamplifiers; 1000 Mbit/s; InGaAsP PIN photodiode; integrated PINFET optical receiver; integrated optoelectronics; monolithic integration; n-channel enhancement InP-MISFET; photocurrent amplification characteristics; preamplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830618
