Title :
Frequency dispersion of transconductance and output resistance in GaAs MESFETs with low-temperature-grown GaAs passivation layers
Author :
Chen, C.L. ; Smith, F.W. ; Mahoney, L.J. ; Manfra, Michael J. ; Calawa, A.R.
Author_Institution :
MIT, Cambridge, MA, USA
fDate :
3/4/1993 12:00:00 AM
Abstract :
High-resistivity GaAs grown at low temperatures by molecular beam epitaxy was used as the surface passivation layer of MESFETs. When these MESFETs are biased in the saturation region, the frequency dispersions of the transconductance and output resistance are reduced compared to those of a MESFET without a passivation layer.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; passivation; semiconductor epitaxial layers; semiconductor growth; GaAs; GaAs passivation layers; MBE; MESFET; frequency dispersions; low-temperature-grown; molecular beam epitaxy; output resistance; saturation region; surface passivation; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930334
