A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs

Author

Geissberger, Arthur E. ; Bahl, Inder J. ; Griffin, Edward L. ; Sadler, Robert A.

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

Volume

35

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

615

Lastpage

622

Abstract

The authors fabricated GaAs power FETs and microwave ICs using a novel fully planar, refractory self-aligned gate process. This process uses methods to reduce the gate resistance and output conductance without sacrificing simplicity. Because it is compatible with the use of an optical stepper, the process is suitable for manufacturing use. The C-band RF performance is excellent; the very uniform and reproducible device parameters resulted in a first-iteration 2.5-W C -band power amplifier that met design specifications on the first lot of wafers processed

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; microwave amplifiers; microwave integrated circuits; power amplifiers; power transistors; solid-state microwave devices; 1.9 W; 2.5 W; 38 percent; 5.5 GHz; 8 dB; C-band RF performance; C-band power amplifier; GaAs; MMICs; gate resistance; microwave ICs; microwave power FETs; optical stepper; output conductance; power added efficiency; refractory self-aligned gate technology; FETs; Gallium arsenide; Manufacturing processes; Microwave technology; Optical amplifiers; Optical refraction; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2503

Filename

2503