DocumentCode
989261
Title
Photochemical microetching of GaAs
Author
Mottet, Serge ; Henry, Leanne
Author_Institution
CNET Lannion B, ICM/TOH, Lannion, France
Volume
19
Issue
22
fYear
1983
Firstpage
919
Lastpage
920
Abstract
Controlled etching of III-V compound semiconductors is an important step in the fabrication of discrete and integrated components. We have developed a system which allows a 1.3 ¿m diameter light spot to be obtained. Displacement of the spot on the sample and speed are controlled by a computer for any desired figure. The light spot is used to photochemically etch GaAs immersed in aqueous solutions.
Keywords
III-V semiconductors; etching; gallium arsenide; 1.3 micron diameter light spot; GaAs; III-V semiconductor; aqueous solutions; etching; photochemical microetching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830628
Filename
4248163
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