Title :
1.55 mu m multiquantum well semiconductor optical amplifier with low gain ripple and high coupling efficiency for photonic circuit integration
Author :
Newkirk, M.A. ; Miller, B.I. ; Koren, U. ; Young, Matthew G. ; Chien, M. ; Jopson, R.M. ; Raybon, G. ; Burrus, C.A. ; Presby, H.M.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
3/4/1993 12:00:00 AM
Abstract :
The Letter demonstrates a 1.55 mu m multiquantum well amplifier on an extended InGaAsP passive waveguide with only +or-0.14 dB gain. Reflectivity <8*10-5 from active-to-passive transitions and 41% coupling efficiency from a single-mode fibre are obtained. These amplifiers are suitable for integration with other optical devices in photonic integrated circuits.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; semiconductor lasers; 1.55 micron; 23.5 dB; 41 percent; InGaAs-InGaAsP; active-to-passive transitions; extended InGaAsP passive waveguide; high coupling efficiency; low gain ripple; multiquantum well semiconductor optical amplifier; photonic circuit integration; reflectivity; single-mode fibre;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930296
