Title :
Zero-temperature-coefficient (ZTC) biasing of power VDMOS transistors
Author :
Prijic, Zoran ; Pavlovic, Zoran ; Ristic, Sonja ; Stojadinovic, Ninoslav
Author_Institution :
Nis Univ., Yugoslavia
fDate :
3/4/1993 12:00:00 AM
Abstract :
It is shown that, in contrast to conventional MOSFETs power VDMOS transistors exhibit a unique ZTC point only in the saturation region of operation. Also, an analytical expression for the gate voltage for the ZTC biasing of power VDMOS transistors, leading to excellent agreement with experimental data, is derived.
Keywords :
insulated gate field effect transistors; power transistors; 300 to 473 K; ZTC biasing; drain current; gate bias; gate voltage; high temperature operation; power VDMOS transistors; saturation region; transfer characteristics; zero temperature coefficient biasing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930291
