Title :
Optimum choice of Si FET or GaAs FET as first-stage active device for very low-noise optical receivers with medium bandwidths
Author :
Schmidt Auf Altenstadt, W.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Technische Elektronik, Mÿnchen, West Germany
Abstract :
The use of GaAs FETs as the first stage in transimpedance amplifiers is common practice for wide-bandwidth systems up to 1 Gbit/s. For medium- or low-bandwidth systems GaAs FETs are not necessarily superior to Si FETs. A rather straightforward but sufficiently accurate way is shown for rapid evaluation of the best choice under given conditions.
Keywords :
field effect transistors; gallium arsenide; optical communication equipment; receivers; silicon; GaAs FET; Si FET; first-stage active device; medium bandwidths; optical communication equipment; transimpedance amplifiers; very low-noise optical receivers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830639
