DocumentCode
989389
Title
High-speed infra-red modulator with multilayered pn-junctions
Author
Yamada, Shigeru ; Urisu, T. ; Mizushima, Y.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
19
Issue
22
fYear
1983
Firstpage
940
Lastpage
941
Abstract
A high-speed infra-red modulator having a GaAs multilayered pn-junction and resonator structure is proposed. Device operation is based on infra-red interaction with injected carriers at each junction. The performance calculation reveals an amplitude of 50%, and an approximately ¿ phase modulation depth with expected bandwidth in the gigahertz order.
Keywords
III-V semiconductors; gallium arsenide; optical modulation; p-n homojunctions; photoelectric devices; GaAs; high speed infrared modulator; multilayered p-n junctions; resonator structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830641
Filename
4248178
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